Libros
Strain-Engineered MOSFETs
ISBN: 978-1-138-07560-3
Editorial: CRC Press
Licencia: Creative Commons (by-nc-nd)
Autor(es): Maiti, C y Maiti, T
Editorial: CRC Press
Licencia: Creative Commons (by-nc-nd)
Autor(es): Maiti, C y Maiti, T
This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization.
[2012]
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